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A New CVD Process For Damascene Low k Applications
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ABSTRACT
Alow dielectric material, “Black Diamond”, based on Silicon Dioxide has been developed. The density of the material and hence the dielectric constant can be modified by choosing an appropriate terminating molecular group. It has the added advantage that the properties of Silicon Dioxide are retained for the device manufacturing processes. It is produced by conventional CVD and so should be compatible with normal Fab line operations.
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