Online information source for semiconductor professionals

A Breakthrough in Low-k Barrier/Etch Stop Films for Copper Damascene Applications

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

PING XU & SUDHA S. RATHI, Applied Materials, Santa Clara, CA, USA


Alow-k dielectric barrier/etch stop film, called BLOk™, has been developed for use in copper damascene processes. This silicon carbide film is deposited using trimethylsilane ((CH3)3SiH) and has a lower dielectric constant (k < 5) than that of conventional SiC films (k > 7) generated by SiH4 and CH4, and that of plasma silicon nitride (k > 7). Characterisation of the film, including physical, electrical, and copper diffusion barrier properties, and etch selectivity, shows that this film is a good barrier/etch stop for low-k copper damascene applications. Its low dielectric constant enables a significant reduction in the effective k value of the completed dielectric stack in damascene devices.
Download Please login to download the paper. No account yet? Please register. It's free!

Related articles

New Product: Applied Materials offers BLOk II PECVD system for barrier films at 45nm and below - 04 June 2007

All-Optical, Non-Contact Metrology for Characterising CMP of Copper Films - 01 March 2000

Measurement of Metal Film Thickness for Copper Interconnects - 01 December 2002

Copper Metallization Technology for ULSI Chip Interconnects - 01 March 1999

Copper metallization for advanced interconnects: the electrochemical revolution - 01 August 2004

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: