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Product Briefings > Materials and Gases

New Product: Ferro’s new ILD slurry eliminates reverse mask etch-back steps

05 July 2007 | Materials and Gases
FerroProduct Briefing Outline: Ferro Electronic Material Systems has introduced a patent-pending self-stopping chemical mechanical planarization (CMP) slurry for Inner Layer Dielectric (ILD) materials. Ferro claims the new slurry provides planarization efficiency of > 95% with an increased over-polish window and eliminates the need for endpoint detection.  ‘SureStop' 8500 offers improved efficiency and uniformity with lower defectivity compared to standard ILD CMP slurries and is now being used to simplify planarization processes that employ reverse mask etchback steps. Read more >>

New Product: Ferro’s new formulated ceria slurry targets 65nm STI processes

22 June 2007 | Materials and Gases
FerroProduct Briefing Outline: Ferro Electronic Material Systems has formulated patented high selectivity shallow trench isolation (STI) CMP slurries with an optimized low defectivity ceria particle that enable high-yield processes for next-generation devices.  ‘TruPlane™ 8272' is performing successfully in high-volume manufacturing of 65nm technology Flash devices, according to the company. Read more >>

New Product: New tungsten slurries from Cabot combat edge-over-erosion

19 June 2007 | Materials and Gases
CabotProduct Briefing Outline: Cabot Microelectronics has claimed a major breakthrough in its CMP technology with the ‘WIN' platform of tungsten (W) CMP slurries for advanced technology nodes. The WIN product line is non-hazardous and environmentally friendly as it is based on hydrogen peroxide technology. The product platform is composed of two main product classes: ‘WIN W7000' and ‘WIN W7300.' Read more >>

New Product: BOC Edwards aims HELIOS 6 at high-flow gas abatement requirements

01 June 2007 | Materials and Gases
BOCProduct Briefing Outline: BOC Edwards has introduced the ‘HELIOS 6' gas abatement solution that uses its unique inward-fired combustion technology for high hydrogen flow processes, such as Si and SiGe epitaxy, LPCVD tungsten and compound semiconductor MOCVD. Both the HELIOS product line and the proprietary inward-fired combustor technology that it incorporates are well-established industry standards. BOC Edwards has installed hundreds of HELIOS systems and thousands of combustors worldwide. Read more >>

New Product: ATMI’s RegenSi wafer reclaim offers shorter etch times for 300mm wafers

19 April 2007 | Materials and Gases
ATMIProduct Briefing Outline: ATMI has introduced a new product line for 300mm wafer reclaim applications called ‘RegenSi Wafer Reclaim Solutions.' ATMI's formulas are designed for dielectric removal and are semi-aqueous, fluoride-based solutions with low viscosity, and are therefore easily rinsed with water. They are designed to work with either batch or single wafer spray tools. Read more >>

New Product: Toshiba & partners use electrolyzed sulfuric acid for resist stripping

19 February 2007 | Materials and Gases
ToshibaProduct Briefing Outline: Toshiba Corporation, Shibaura Mechatronics Corporation and Chlorine Engineers Corp. have co-developed an innovative semiconductor resist stripping technology that employs electrolyzed sulfuric acid. It is the first time that electrolyzed sulfuric acid has been applied to resist stripping, according to the companies. The partners have already developed a single-wafer resist-stripping system that will be integrated into the resist-stripping process at Toshiba's Yokkaichi Operations in April 2007. Read more >>

New Product: CMP pad from Cabot offers improved pad life and performance repeatability

04 January 2007 | Materials and Gases
CabotProduct Briefing Outline: Cabot Microelectronics Corporation has launched its new CMP polishing pad, the Epic D100, which is the result of extensive research intended to deliver a step change improvement in CMP pad life and pad-to-pad consistency. Customers are successfully qualifying and using the Epic D100 for dielectric, shallow trench isolation, tungsten and copper processes. The new pad is already being used in production and is being evaluated by multiple customers, according to the company. Read more >>

New Product: Mallinckrodt Baker’s CLk-870 residue remover cuts process times

04 January 2007 | Materials and Gases
MalinckrodtProduct Briefing Outline: Mallinckrodt Baker is making the BAKER CLk-870 residue remover available as a cost-effective wet clean product designed to remove inorganic residue and post-etch/ash polymer from 90nm single-wafer processes. According to Mallinckrodt Baker, BAKER CLk-870 residue remover provides fast cleaning action and low process temperatures, making it an ideal chemistry for silicon nitride, copper and delicate low-k substrates. Read more >>

New Product: Rohm and Haas offers improved defect reduction with new CMP pads

24 November 2006 | Materials and Gases
R&HProduct Briefing Outline: Rohm and Haas Electronic Materials' CMP Technologies has introduced a number of new products in two different product lines. The company has unveiled several new additions to its ‘VisionPad' line of polishing pads as well as a new series of ‘IC1000' pads known as ‘IC1000' AT series pads. Read more >>

New Product: Micro Photonics’ Sarfus visualization technology boosts microscope sensitivity

24 November 2006 | Materials and Gases
MircoProduct Briefing Outline: Micro Photonics Inc. has launched its new Sarfus visualization technology, a new optical quantitative imaging technique for highly precise 3D thickness, dimensional, roughness, profile and step height measurements.  Sarfus visualization is based on the perfect control of the reflection properties of polarized light on a Surf (specific supporting plates where the sample is deposited), which leads to an increase in the axial sensitivity of the optical microscope by a factor of approximately 100 without reducing lateral resolution, according to the company. Specific optical properties can be manipulated by controlling the layers deposited on the substrate, and can be customized with specific top layers such as SiO2, Au, Cr or Al. Read more >>