Online information source for semiconductor professionals

New Product: TOK and Dow Corning develop bilayer photoresist for sub-45nm DRAM production

05 December 2007 | By Mark Osborne | Product Briefings > Lithography

Popular articles

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

Sematech Litho Forum: Sematech mulling multi-beam mask writer effort - 12 May 2010

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

TSMC hosts 2008 Green Forum on ‚??green‚?? factories - 31 October 2008

DOWProduct Briefing Outline: Tokyo Ohka Kogyo Co., Ltd. (TOK) and Dow Corning Electronics have jointly developed bilayer photoresist used for DRAM production applications. The new bilayer photoresist uses a Dow Corning silicon polymer in the imaging layer to provide better etch selectivity than other products on the market today, the company claims. Dow Corning and TOK have had a joint development agreement since 2002 to develop advanced silicon-based photolithography materials.  Problem: Photoresist is a light-sensitive material that becomes either soluble or insoluble after exposure to light, allowing portions to be selectively removed during subsequent etching processes. Adding Dow Corning's silicon polymer to TOK's photosensitive materials enables the use of thinner photoresist layers, which is claimed to improve pattern resolution and allows smaller circuit patterns to be transferred onto target wafers without pattern collapse issues.

Solution: The new photoresist is intended to provide a more cost-effective lithography solution by eliminating the hardmask layer and accompanying process steps required by multilayer photoresist processes. It can be used for both dry and immersion lithography, an advanced imaging technology that is gaining market acceptance for the 45nm node and beyond. TOK has said that it has already demonstrated the use of the photoresist under immersion lithography conditions to produce 35nm line/space patterns.

Applications: DRAM using both dry and immersion lithography for the 45nm node and beyond.

Platform: Customized silsesquioxane resins.

Availability: December 2007 onwards.

Related articles

Bilayer resist method for dual damascene processes and advanced devices - 01 December 2003

Novellus‚?? resist strip system becomes tool of record at major Asian foundry - 16 September 2008

Advanced measurements for photoresist fundamentals - 01 December 2004

Shin-Etsu Chemical follows TOK in EUV resist development work with SEMATECH - 01 September 2009

Critical component requirements for ALD technology - 01 March 2004

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: