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New Product: TEL & Novellus create new 2Xnm node integrated copper interconnect process

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he co-developed process employs an ionized PVD TaN or Ti barrier capped with an ultra-thin CVD Ruthenium (Ru) liner.Product Briefing Outline: Tokyo Electron and Novellus Systems have co-developed an integrated copper interconnect solution for the 2Xnm generation and beyond. This integrated metallization scheme is the result of a joint program established between the two companies for the continuous advancement of copper interconnect technology. The co-developed process employs an ionized PVD TaN or Ti barrier capped with an ultra-thin CVD Ruthenium (Ru) liner. This barrier and Ru liner is then coupled with a proprietary copper wet seed process (eliminating the PVD Cu seed process) and a copper electrochemical deposition process, which yields fully-filled fine features at the 2Xnm node without the issues associated with PVD liners and seeds.

Problem: Continued technology shrinks restrict the ability to successfully fill interconnects with copper using conventional PVD Cu seed processes, which can lead to problem with step coverage, overhang and feature shadowing. At the 2Xnm node and below new process streams are required that will also reduce line resistance. A substantial reduction in the number of process steps without sacrificing the benefit of low CoC is also required to keep manufacturing costs under control.

Solution: A new metallization scheme has been developed that are enabled by two key process steps. The first key process is a Ruthenium liner layer deposited by a CVD process using the TEL ‘Trias Tandem’ system. The CVD Ru process offers feature conformality and resistivity in aggressive damascene features at thicknesses of ≤2nm (20«ļ). The proprietary CVD Ru process and hardware provides both productivity and efficient use of the Ru precursor. In mass production, the consumable cost for the CVD Ru process (including pre-clean and barrier processes) is claimed to be the best of all preferred options. According to the companies, this level of consumable cost is not achievable with PVD Ru or ALD Ru. The second key process step is a wet copper seed process called ‘DirectSeed’ which is deposited in the Novellus ‘SABRE Extreme’ electrochemical deposition tool. DirectSeed from Novellus is a proprietary technology for depositing a smooth, conformal Cu seed layer with thicknesses ≤3nm (30«ļ) directly on the CVD Ru substrate. The DirectSeed process eliminates the need for a PVD Cu seed layer and eliminates the processing challenges with PVD including step coverage, overhang and feature shadowing. The industry-leading SABRE Extreme Electrofill process is also used to deliver perfectly-filled Cu features at the 2Xnm node.


Applications: Copper interconnect processes for the 2Xnm generation and beyond.

Platform: The SABRE Extreme is targeted for the 3X and 2X technology nodes. SABRE Extreme features an improved plating cell incorporating an advanced fluid management system and current distribution technology. SABRE Extreme runs advanced Electrofill chemistry, key to providing copper filling capability on extremely narrow high-aspect-ratio features.
TEL’s Trias Tandem is a product of Trias series featuring a high vacuum apparatus capable of accommodating PVD and CVD modules for copper interconnect processes. Trias Tandem with iPVD module and CVD Ru module developed by TEL is capable for 3X and 2X technology nodes

Availability: December 2008 onwards.

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