Online information source for semiconductor professionals

New Product: New tungsten slurries from Cabot combat edge-over-erosion

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

CabotProduct Briefing Outline: Cabot Microelectronics has claimed a major breakthrough in its CMP technology with the ‘WIN' platform of tungsten (W) CMP slurries for advanced technology nodes. The WIN product line is non-hazardous and environmentally friendly as it is based on hydrogen peroxide technology. The product platform is composed of two main product classes: ‘WIN W7000' and ‘WIN W7300.'

Problem: As device dimensions shrink for more advanced applications (e.g. 65nm and beyond), the CMP performance requirements are becoming more stringent. Today, reducing or even eliminating Edge-Over-Erosion (EOE) is a major focus in the CMP industry. Very few studies have been published regarding this phenomenon, which led to a common myth that the slurry chemistry is the root cause of EOE formation. Studies at Cabot indicate that EOE formation in tungsten CMP is driven purely by mechanical effects.

Solution: WIN W7000 is a high selectivity slurry that is related to its ‘Semi-Sperse' W2000 platform. WIN W7000 includes fumed silica abrasives and a proprietary etch inhibitor technology that provides improved performance with a wide over-polish window and substantially reduced EOE. WIN W7000 has been demonstrated to provide a 70-80 percent improvement in erosion compared to Semi-Sperse W2000 1:1 diluted. Coupled with a soft landing step, EOE is substantially eliminated on 300mm CMP process steps. WIN W7300 is a tunable selective slurry based on hydrogen peroxide technology and made with an ultra-pure colloidal particle that results in improved planarization, EOE and defectivity performance. The product has been also been used successfully as a "buff" on a hard pad using the same platen, according to the company.

Applications: Tungsten CMP processes 45nm and below.

Platform: The WIN product line is based on hydrogen peroxide technology. W7000 (high selectivity) and WIN W7300 (tunable low selectivity) are compatible with Cabot's other W slurries and can also be used as a buff on a hard pad (same platen).

Availability: May 2007 onwards.


Related articles

Cabot Microelectronics opens CMP pad manufacturing facility - 20 October 2008

CMP consumables supplier shakeout seen by Techcet - 02 June 2010

Tool Order: Texas Instruments purchases ADE‚??s new NanoXam metrology tool - 08 November 2005

New Product: CMP pad from Cabot offers improved pad life and performance repeatability - 04 January 2007

New Product: Cabot develops highly tunable B6600 barrier slurry for advanced Cu/low-k - 21 August 2007

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: