Online information source for semiconductor professionals

New Product: New ‚??Producer eHARP‚?? SACVD system from Applied meets 32nm STI gap-fill requirements

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

AppliedProduct Briefing Outline: Applied Materials is now offering the ‘Producer eHARP’ (enhanced High Aspect Ratio Process) system that extends the ‘HARP SACVD’ gap-fill technology for critical STI device structures to 32nm and beyond. The eHARP process has been developed to produce void-free films to fill <30nm, >12:1 aspect ratio features that are seen as being essential for the fabrication of advanced memory and logic devices. The eHARP process features new proprietary process innovations to enable high-density, strain-inducing films enable the scaling of conventional planar and emerging 3-D device structures.

 Problem: Applied offers customers an STI gap-fill roadmap beyond 32nm without significant changes to their process flow. Using a new non-plasma based CVD (chemical vapor deposition) oxide film, eHARP is aimed at addressing the stringent gap fill requirements for STI unit processes at next-generation geometries.

Solution: The new eHARP film improves upon the first-generation HARP film gap fill capability by introducing water vapor to the TEOS/ozone chemistry during the deposition process. This results in a more tightly packed, denser film that enables seamless, void-free gap fill in features with aspect ratios >12:1.  eHARP technology is claimed to offer the lowest overall cost-per-wafer compared to non-CVD gap-fill technologies. Virtually carbon-free, the eHARP film requires no protective liners or capping layers, easily integrates with conventional CMP processes and provides reliable, robust device isolation. In addition, the eHARP system’s proven process chemistries do not generate hazardous liquid byproducts that would necessitate specialized chemical disposal.

Applications: The eHARP process is designed for conventional planar and emerging 3-D device structures that can require void-free films to fill <30nm, >12:1 aspect ratio features.

Platform: The eHARP process is available on Applied’s acclaimed Producer platform, which is used by virtually every chip manufacturer for advanced applications including etch, low-k deposition, strain engineering, litho-enabling films, PECVD and SACVD. More than 500 Producer systems have been shipped to customers for SACVD applications, any of which can be upgraded to run the eHARP process.

Availability:
July 2008 onwards.

Applied

Related articles

New Product: Oxide spacer system from Applied Materials enables 32nm self-aligned DP - 24 July 2007

Milestone: Applied Materials ships 200th Producer APF CVD system - 09 May 2008

New Product: Applied Materials‚?? Producer GT is productivity dream machine for fabs - 20 November 2006

New Product: Applied Materials’ InVia system tackles HAR liner film deposition for TSV structures - 15 April 2010

New Product: Nikon‚??s NSR-S610C immersion tool uses 1.30 NA catadioptric lens for sub-45nm patterni - 20 September 2006

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: