Online information source for semiconductor professionals

New Product: New mask etcher from Applied Materials enables aggressive OPC techniques

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

AMATProduct Briefing Outline: Applied Materials has launched the ‘Applied Centura' ‘Tetra III Advanced Reticle Etch' tool that enables the etching of 45nm photomasks. The Tetra III controls trench depths across quartz masks to <10Å and reduces critical dimension (CD) loss to <10nm, thus enabling the use of alternating phase shift masks (aPSM) and aggressive optical proximity correction techniques.

Problem: As the semiconductor industry continues to extend the limits of current lithography technologies, there is a growing need for photomask etching techniques that can handle the range of new materials being used.  Many of these new materials enable the use of resolution enhancement techniques, such as optical proximity correction (OPC) and alternating phase shift mask (aPSM), while meeting the needs in a single platform for all photomask etching requirements.

Solution: Tetra III is designed to enable the etching of 45nm photomasks with the ability to control trench depths across quartz masks to <10Å, and reduces critical dimension (CD) loss to <10nm.  This reduction enables the use of aPSM and aggressive optical proximity correction techniques in the most critical device layers. The system offers zero defect, high productivity etch processes for chrome, quartz, molybdenum silicon oxynitride (MoSiON) and various new materials for next generation lithography applications, according to Applied Materials. The system employs advanced processes, so that the system can etch a wide variety of masks. This minimizes dependencies on process libraries, tool operation complexities, development cycle times, and expert users.  

Applications: Mask etching of chrome, quartz, molybdenum silicon oxynitride (MoSiON) and various new materials.

Platform: The Applied Centura Tetra III system's ultra-clean and extendible platform enables customers to etch the most advanced masks with the highest yields to date.

Availability: April 2007 onwards.

Related articles

SPIE 2012: Tachyon FMO provides effective hotspot repair for advanced mask correction - 13 February 2012

New Product: Mask data verification tool detects potential yield issues in mask manufacturing - 22 May 2006

New Product: Applied Materials‚?? ‚??Aera2‚?? detects defects according to patterning impact - 15 April 2008

Some Challenges for Mask-Making to Keep Up With the Roadmap - 01 December 1999

Using polymer deposition to control contact hole distortion at ‚?§65nm - 01 September 2006

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: