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New Product: New e-beam resist from Dow Corning enables 6nm features
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Product Briefing Outline: Dow Corning Electronics'
Silicon Lithography Solutions group has now made available its XR-1541
E-Beam Resists, designed to enable the development of next-generation,
direct-write lithography processing technology. This family of new
advanced spin-on resists, which allow patterning with electron beams,
is claimed to enable 6nm features.
Problem: Current lithography technology is becoming
technically and economically difficult to extend beyond the 32nm node.
New e-beam resists provide research groups with an economical way to
directly write patterns with some of the highest resolutions possible,
which will enable next-generation lithography process development for
fabricating integrated circuits, masks or nanoimprint molds.
Solution: Available in a variety of high-purity, semiconductor-grade formulations,
XR-1541
E-Beam Resists consist of hydrogen silsesquioxane (HSQ) resin in a
carrier solvent of methylisobutylketone (MIBK). These negative-tone
resists can be used with standard spin-on deposition coating equipment
to produce thin films ranging in thickness from 30nm to 180nm in a
single coat. Custom formulations are available for thinner or thicker
films. The resists are claimed to offer excellent etch resistance and
line-edge definition down to 3.3nm, and can be processed in a standard
aqueous base developer.
Applications: E-beam lithography.
Platform: XR-1541 E-Beam Resists consist of hydrogen silsesquioxane (HSQ) resin in a
carrier solvent of methylisobutylketone (MIBK).
Availability: June 2008 onwards.