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Product Briefing Outline: ASML has launched its newest TWINSCANTM XT:1950i lithography system using a 1.35 NA lens, which is claimed to increase the performance of its immersion lithography systems by 25 percent. The system offers improved overlay, resolution and throughput, to enable high-volume manufacturing of more powerful 38nm memory and 32nm logic semiconductors.

Problem: High-throughput immersion lithography is required for the semiconductor industry to keep up with Moore’s law in a timely and cost effective manner. Shrink is needed to boost memory capacities and multimedia applications for DRAM and Flash, and drive advanced integration and improved functionality for logic applications such as computer chips and digital signal processors for portable devices.

Solution: The XT:1950i is the industry’s first single-exposure immersion lithography system for high volume manufacturing at 38nm, which enables a 10% increase in wafer area available for chips over the XT:1900i. In addition the XT:1950i offers a productivity increase close to 15% , generating higher throughput of 148 wafers per hour, accordording to the company. With improvements in imaging, overlay, stability and control, the XT:1950i is designed for the most advanced volume production environments.

Applications: 38nm memory and 32nm logic volume production.

Platform: The XT:1950i offers improvements over the XT:1900i that include a 30% tighter overlay accuracy specification via improved stage control. An overall productivity increase of nearly 15% is claimed, due to new immersion techniques and enhanced stages. A resolution improvement of 5% (from 40 to 38 nm), resulting in a 10% area increase, for higher yield and/or increased functionality such as higher density and capacity memory chips. The TWINSCAN XT:1950i also provides a 3.5 nm overlay capability and will support low k1 applications.

Availability: ASML expects to begin shipping the XT:1950i by Q1 2009