Online information source for semiconductor professionals

New Product: Ashable hardmask films from Novellus offer 25% greater etch selectivity

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

Product Briefing Outline: Novellus Systems has developed a new suite of ashable hardmask (AHM) films that are claimed to have up to 25% greater etch selectivity compared to similar amorphous carbon films in use by the industry today. According to Novellus the highly selective and transparent (HST) AHM family of films has demonstrated die yield improvements as much as 7% when coupled with Novellus’ patented integrated edge bevel removal (EBR) technology.

Problem: Sub-32nm device design rules require high aspect ratio (AR) patterning for both logic and memory devices. At these advanced geometries, plasma-enhanced chemical vapor deposition (PECVD) based amorphous carbon films have higher etch selectivities and superior mechanical properties than traditional photoresists. Additionally, films of this nature enable more accurate pattern transfer from the photoresist to the substrate without complications such as pattern collapse and line bending. These amorphous carbon films are also used for double patterning schemes, enabling cost effective, high density patterning.

Solution: Figure 1A contrasts the normalized etch selectivity for a conventional amorphous carbon film deposited at 550°C with a Novellus HST AHM film. While increasing deposition temperature can be used to increase selectivity, it also has the negative effect of decreasing the film’s transparency. Less transparent films are more difficult to align during the photo step. With Novellus AHM films, transparency is not sacrificed, and the selectivity required for high AR patterning is maintained. Also shown in Figure 1A are critical dimension uniformity (CDU) maps showing typical etch selectivity performance for conventional amorphous carbon films and Novellus HST AHM films. The high selectivity and low erosion rate of the Novellus films demonstrate better within-wafer CDU performance, which facilitates the patterning of dense, high AR features (Figures 1B and 1C) and is critical to yield enhancement. The AHM thickness at the wafer’s edge impacts the die yield in that region, requiring a narrow transition zone from full AHM thickness to bare silicon (i.e., complete AHM removal). Novellus’ ‘VECTOR’ PECVD platform features an integrated EBR capability that provides complete removal of the AHM film within a 1mm transition zone. This sharp transition ensures that edge die have the required AHM thickness necessary for excellent CD uniformity control within 2 mm from the wafer’s edge (see Figure 2). Because the EBR module is integrated onto the deposition platform, no additional bevel edge cleaning tools are required. And, since the AHM removal is performed outside the deposition chamber, better process and particle control can be achieved as compared to other in-situ edge control techniques. Conventional amorphous carbon films deposited at higher temperatures are prone to moisture absorption at a faster rate.

Applications: Ashable hardmask (AHM) films for lithography processing.

Platform: For hardmask and dual patterning applications, Novellus offers a suite of AHM amorphous carbon films for the VECTOR PECVD platform. However, the multi-station sequential deposition (MSSD) architecture of the Novellus VECTOR PECVD platform enables superior hermeticity performance by incorporating process interfaces, which help to block moisture uptake.

Availability: November 2009 onwards.

Related articles

New Product: Novellus adds ashable hard mask process to ‚??VECTOR Extreme‚?? PECVD platform - 26 November 2008

New Product: Line edge roughness reduction at 45nm on Applied‚??s Producer APF-e system - 15 September 2006

A Breakthrough in Low-k Barrier/Etch Stop Films for Copper Damascene Applications - 01 March 2000

Milestone: Novellus ships 100th 300mm tool to Southeast Asia - 12 March 2008

New Product: Applied Materials offers BLOk II PECVD system for barrier films at 45nm and below - 04 June 2007

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: