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New Product: Applied Materials PVD ‚??Extensa‚?? provides copper deposition for memory devices

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first PVD chamber to feature a flux-shaping, dual-magnet sourceProduct Briefing Outline: Applied Materials has launched its Applied Endura ‘Extensa’ PVD system, designed for depositing the critical barrier films for copper interconnects in sub-55nm memory chips. The Extensa system’s unique titanium/titanium nitride (Ti/TiN) process technology enables diffusion barrier films with benchmark step coverage and <3% film thickness non-uniformity across the wafer, while achieving best-in-class defectivity and >25% lower CoC2 than competing systems.

Problem: The introduction of copper in memory devices presents unique film integration challenges due to the high voltages and dense packing requirements of memory cells. Manufacturers are adopting new liner/barrier schemes as the most cost-effective way to get the performance benefits of copper.

Solution: The Extensa system enables the robust integration of these critical new diffusion barriers with a proven, single-system solution that allows memory makers to realize high device yields down to the 32nm technology node and beyond. Innovations in PVD technology are said to be implemented on the Extensa Ti/TiN deposition chamber. A novel dual-magnet PVD source with flux-shaping side electromagnets enables unmatched step coverage and defectivity below 10 particles at ≥0.12 micrometer. The proprietary source technology also makes more efficient use of deposition material, delivering a 30% improvement in target life. In addition, the single piece chamber kit features Applied’s proprietary ‘CleanCoat’ technology for ease of maintenance and particle control.

Applications: The Extensa technology offers Ti/TiN deposition solutions to support two key technology transitions in memory: the replacement of tantalum with Ti-based dielectric barriers in copper barrier/seed applications, and the introduction of copper-aluminum and copper-tungsten diffusion barriers that enable the most cost effective integration of copper with aluminum layers and tungsten vias.

Platform: Applied claims that this is the first PVD chamber to feature a flux-shaping, dual-magnet source, Extensa TTN’s high-ionization magnet improves step coverage for advanced features (>40% for 0.10μm 4:1 aspect ratio), with low center-edge bottom and sidewall asymmetry (~1:1). Side electro-magnets enable process tuning flexibility to accommodate different types of features and to compensate for etch-related variations in feature size.

Availability: Currently available.

Applied Endura ‘Extensa’ PVD system, designed for depositing the critical barrier films for copper interconnects in sub-55nm memory chips.

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