Problem: As films become thinner, CMP becomes
increasingly difficult, requiring much more precise wafer-to-wafer
process control to achieve acceptable yields. Using broadband spectral
analysis, FullVision technology monitors individual polishing zones
across
the wafer that are claimed to provide twice the accuracy and
repeatability of competitive systems on a wide variety of process steps
– without compromising throughput.
Solution:
The Applied Reflexion LK CMP system implements a full suite of endpoint
methods, in-line metrology and advanced process control capabilities.
Its patented window-in-pad technology enables real-time polish control
of every wafer without compromising throughput. The new FullVision
in-situ endpoint system, for all stop-in and stop-on dielectric
applications, uses broadband spectroscopy to significantly improve Cpk
and minimize wafer scrap caused by drifts in consumable sets and
incoming wafer variations. The system demonstrates high repeatability
across all applications with less than 150 angstrom, 3-sigma endpoint
accuracy on patterned wafers. A major advance over single wavelength
endpoint technologies, the FullVision system offers improved
measurement accuracy with a claimed 50 percent higher reliability for
dielectric applications.
Applications: Oxide, STI and poly CMP.
Platform: Applied Reflexion LK CMP system uses a 4-head/3-platen architecture.
Availability: November 2007 onwards.