Online information source for semiconductor professionals

New Product: Alchimer launches cost-saving ‚??AquiVia‚?? deposition process

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

Product Briefing Outline: Alchimer S.A has launched its cost-saving ‘AquiVia’ deposition process. The AquiVia process is claimed to reduce overall cost of ownership for through-silicon via (TSV) metallization by up to 65 percent vs. conventional dry processes. Alchimer’s new process encompasses three distinct process steps required before the TSV can be filled with metal. It enables wet-process deposition of insulator, barrier and copper seed layers within high-aspect ratio TSVs, using Electrografting technology.

Problem: 3D chip stacking has been identified as the solution that can deliver increased functionality and performance while simultaneously reducing size, cost, and power consumption. A key enabling technology for 3D stacking is the filling of through silicon vias (TSV). These TSVs may have aspect ratios ranging anywhere from 5:1 to more than 20:1, so filling them with metal presents a unique challenge. The challenge is even more acute for filling Bosch-etched TSVs as they have scalloped walls that make it difficult for a line-of-sight process like PVD to deposit continuous and conformal films on the sidewalls, resulting in poor Cu fill of the TSVs with undesirable voids. Therefore, for the Cu barrier and seed films it is essential that they be continuous and conformal along the entire inside surface of a TSV. A conventional PVD tool without expensive re-sputtering capability is not capable of seeding high aspect ratio scalloped TSVs. ALD and CVD techniques, although conformal are prohibitively expensive, due to equipment and precursor costs.

Solution: AquiVia combines, for the first time, wet deposition processes for insulation, barrier, and seed layers in TSV metallization. The insulation liner is deposited by Electrografting, leading to strong covalent bonds between the insulator and the semiconductor surface. The resulting grafted polymer shows excellent insulator properties and very good thermal stability. An improved wet current-free deposition process then produces a conformal nickel-based barrier layer grafted directly to the insulator. The Cu seed is then deposited using Alchimer’s eG ViaCoat, creating an extremely adherent ultra-conformal layer. This results in highly conformal and uniform layers for TSVs with aspect ratios of 18:1 and beyond, even on the highly scalloped TSV etch profiles produced by the DRIE/Bosch process.

Applications: High-aspect ratio TSVs

Platform: AquiVia chemistries are ready-to-use aqueous solutions. Formulations and process recipes are fully compatible with standard electroplating tools, and the full wet-process TSV filling flow (isolation/barrier/seed and Cu fill) can now be implemented on a single electroplating tool, with only minor hardware modifications.

Availability: July 2009 onwards.

Related articles

Alchimer partners with Kromax on developing sales in Taiwan - 01 April 2011

DALSA successfully tests Alchimer‚??s TSV technology for consumer MEMS - 15 December 2008

NEXX Systems licenses Alchimer’s eG ViaCoat technology for TSV applications - 09 October 2008

Erik Smith joins Alchimer as COO - 10 January 2011

Top 5 new products for 2008 - 29 December 2008

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: