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Wet and dry 193nm ArF lithography key choice for 32nm node production
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At the 3rd SEMATECH Litho Forum, held in Bolton Landing, NY last
week, a survey of the 200-plus lithography experts attending believed
that the technology solution for nominal 32nm half-pitch in 2013 is
double patterning using 193nm dry or water-based immersion lithography
tools. EUV lithography remains the preferred choice for nominal 22nm
half-pitch node.
"The feedback we received from the industry is that although the
technical challenges of lithography are increasing, the business
pressure to keep scaling to smaller device feature sizes remains very
strong, especially for memory companies,” said Michael Lercel, SEMATECH
Lithography Director and Conference Chair.
The two-year technology node migration remains key to leading-edge manufacturers, according to SEMATECH.