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Wet and dry 193nm ArF lithography key choice for 32nm node production

22 May 2008 | By Síle Mc Mahon | News > Lithography

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ASMLAt the 3rd SEMATECH Litho Forum, held in Bolton Landing, NY last week, a survey of the 200-plus lithography experts attending believed that the technology solution for nominal 32nm half-pitch in 2013 is double patterning using 193nm dry or water-based immersion lithography tools. EUV lithography remains the preferred choice for nominal 22nm half-pitch node. 

"The feedback we received from the industry is that although the technical challenges of lithography are increasing, the business pressure to keep scaling to smaller device feature sizes remains very strong, especially for memory companies,” said Michael Lercel, SEMATECH Lithography Director and Conference Chair.

The two-year technology node migration remains key to leading-edge manufacturers, according to SEMATECH.

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