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Vistec Semiconductor highlights EUV mask registration metrology results
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In cooperation with a leading Japanese EUV mask supplier, Vistec
Semiconductor noted at the recent European Mask and Lithography
Conference (EMLC) in Dresden, Germany, that it published new
registration metrology results on EUV masks using its LMS IPRO4. The
results showed that measurement repeatability on EUV masks proved to be
better than 0.8nm and accuracy was below 1.6nm (3 sigma) over the
entire active array of 100 x 128mm.
“The performance achieved is considered to be perfectly suited to
characterize sample R&D masks for EUV lithography,” explained
Klaus-Dieter Roeth, Vistec’s Senior Product Manager for Mask Metrology.
The
company also claimed that all installed LMS IPRO4 systems have
demonstrated performance levels exceeding all system specifications by
at least 25 – 30 percent.
“We are very pleased with the
metrology efficiency of the LMS IPRO4 that is deeply rooted in Vistec’s
many years of expert knowledge in system integration of mask metrology
equipment and its future-oriented design. Our next generation tool, the
Vistec LMS IPRO5, currently under development, will further enhance
EUV-capabilities, and specifically address double patterning
requirements. It will be launched next year,” commented General Manager
Gerhard Ruppik.