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Varian and Soitec to qualify new high current implanter for fully depleted SOI wafers

30 April 2009 | By Mark Osborne | News > Materials and Gases

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Varian Semiconductor Equipment Associates and Soitec are to collaborate on the development and qualification of a new high current implanter for Soitec’s ‘Smart Cut’ SOI technology for fully depleted SOI wafers at the 22nm node.

“Through this collaboration we have the opportunity to add a whole new growth market to our portfolio of applications,” noted Gary Dickerson, Chief Executive Officer of Varian.

“Soitec is committed to meeting the industry’s requirements for the highest quality engineered substrates. Our collaboration with the leading supplier of ion implant equipment is key for us to meet the most advanced requirements in terms of uniformity, especially for fully depleted applications at the 22nm node,” commented Paul Boudre, Chief Operating Officer of the Soitec Group.

Fully depleted SOI wafers have been under development for many years and are expected to provide important performance characteristics for future technology nodes. 

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