Online information source for semiconductor professionals

UMC validates high-k metal-gate process for 32/28nm nodes

25 November 2008 | By Mark Osborne | News > Wafer Processing

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

UMC has said that it has produced working 45nm SRAM test chips using its high-k/metal-gate (HKMG) process technology. According to UMC, this is a major step in validating the technology for inclusion at the 32/28nm nodes.

“UMC is making steady progress in bringing our HK/MG process towards 32/28nm pilot production so that our customers can benefit from the performance advantages of this technology,” said Mr. S.C. Chien, vice president of Advanced Technology Development at UMC. “Despite the global economic uncertainties, UMC continues to move full speed ahead with our advanced technology R&D efforts. With our recent achievement of working 28nm SRAM, coupled with this latest HK/MG process material validation, we are well positioned to offer customers a strong technology platform solution when our 32/28nm technology becomes available in 2010.”

Related articles

TSMC touts gate-last HKMG for 28nm low-power applications - 24 August 2009

UMC looks at hybrid gate-first and gate-last techniques - 10 December 2009

UMC targets 28nm half-node with HKMG & conventional gate technologies - 27 October 2008

IMEC reduces high-k/metal gate process steps from 15 to 9 - 17 June 2008

IBM alliance touts 28nm half-node bulk CMOS process for 2H 2010 - 16 April 2009

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: