Online information source for semiconductor professionals
TSMC adds to analog apps with 180nm embedded flash process
Popular articles
Sematech Litho Forum: Sematech mulling multi-beam mask writer effort - 12 May 2010
Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008
TSMC hosts 2008 Green Forum on ‘green’ factories - 31 October 2008
TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008
Samsung and Micron gain most market share in DRAM crisis - 17 February 2009
TSMC has said that it has qualified a new 180nm embedded flash (embFlash) process technology designed for a wide range of applications, supplemented with an ultra-low leakage process. The baseline 1.8V/5V embFlash process supports enhanced analog performance and traditional 5 volt I/O interface applications, the company said.
The Ultra-Low-Leakage (uLL) embFlash process operates at 1.8V and has a claimed 95% leakage reduction compared to the baseline process. A low power Flash IP supports up to 80% lower standby current and 60% lower active current with the Flash IP compiler expected to be available in the third quarter of 2009.