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Toshiba to start building Fab 5 NAND flash facility

23 March 2010 | By Mark Osborne | News > Cleanroom

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Toshiba Fab 4 in foregroundThe next wave of 300mm fab expansions is now underway with the official announcement from Toshiba that it will start building Fab 5 in July, 2010 at its major fab complex in Yokkaichi, Japan. The NAND flash facility will be similar in size to Fab 4, which has an official capacity of 210,000 wafer starts per month (wspm) and is one of the largest 300mm facilities ever built.

Toshiba said that construction would be completed by the spring of 2011, highlighting the need for Toshiba to add capacity for NAND flash production later in 2011. First phase tool install should therefore take place during the second quarter of 2011 with low volume production in the fourth quarter. Toshiba did not say at what technology node Fab 5 would initially ramp.

The company noted that the new facility would have energy-saving features for cleanroom operations, which included waste heat recycling and carbon emissions 12% lower than Fab 4.

Toshiba was originally expected to start building Fab 5 in the first quarter of 2010, however the economic recession and massive over capacity in the memory market required the company to postpone construction.

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Reader comments

Editor respnse: Hi Chris, that would have been correct as the fab was previously announced and tool install dates etc...But Toshiba put the fab on hold due to the overcapacity and weak demand. Fab 4 still needs to be fully equipped, which is Toshiba's plan for next 9 months, using scaling to boost bit growth before Fab 5 comes onstream.
By Mark Osborne on 30 March 2010
SEMI's World Fab Forecast estimated start of this fab in Yokkaichi since about mid 2009!
By Chris on 23 March 2010

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