Online information source for semiconductor professionals

Toshiba illustrates cost-effective 32nm CMOS platform technology

18 December 2008 | By Síle Mc Mahon | News > Wafer Processing

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

ToshibaToshiba Corp. has revealed its new cost-effective 32nm CMOS platform technology, that is claimed to halve the cost per function compared to that of 45nm technology. The new technology, claimed to offer higher density and improved performance, was achieved via application of advanced single exposure lithography and gate-first HKMG process technology. It is claimed to enable a 0.124μm2 SRAM cell and a gate density of 3,650 gate/mm2, the smallest SRAM cell in the 32nm generation to date.

The platform technology is based on a 32nm process technology, developed in a collaborative move by Toshiba and NEC Electronics Corporation. The work illustrated the transistor performance boost achieved through application of a metal gate/high-K as well as the reduction in threshold voltage mismatch. The layout optimization utilized a bent-shaped type cell, which further decreased threshold voltage mismatch.

Related articles

Amkor to purchase Toshiba‚??s Malaysian IC assembly and test operations - 30 September 2011

NEC Electronics joins IBM in 32nm and below process development - 11 September 2008

SOI takes hit but no knock-out - 10 January 2008

Toshiba notes NAND flash memory price erosion faster than expected - 19 September 2008

Toshiba plans chip plant closures in Japan - 28 January 2009

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: