Online information source for semiconductor professionals

Toshiba breaks ground on Fab 5 NAND flash facility

15 July 2010 | By Mark Osborne | News > Cleanroom

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

Toshiba and SanDisk are once again teaming to operate another 300mm mega-fab at Toshiba’s Yokkaichi Operations in in Mie Prefecture, Japan with the start of construction of delayed Fab 5, NAND flash facility. The fab will be constructed in two phases, with the pace of investment reflecting market trends. On completion of its second phase, Fab 5 will be comparable to Fab 4, with a ground area of some 38,000m2. Fab 4 has an estimated capacity of over 210,000wspm. Construction work is scheduled for completion in the spring of 2011.

The NAND flash manufacturing partners said that initial production would start with 20nm devices, which could be in operation by fourth quarter 2011. Toshiba and SanDisk also noted they were currently ramping previously unused clean room space in Fab 4, and expect to reach full capacity of Fab 4 by the start of production in Fab 5.

“Constructing the new facility assures our ability to respond to continued strong demand in the NAND flash memory market,” noted Mr. Kiyoshi Kobayashi, Corporate Senior Vice President of Toshiba Corporation, President and CEO of Semiconductor Company. “With our partner SanDisk, we will increase the manufacturing capacity gradually in accordance with market conditions, in a way that further enhances our competitiveness in the memory business.”

Fab 5 will naturally have a quake-absorbing structure and is designed to impose minimal environmental impacts. Toshiba said they would use LED lighting throughout the facility as well as energy-saving manufacturing equipment, and use of inverter-controlled pumps for semiconductor production equipment. These technologies are expected to cut CO2 emissions to a level 12% lower than for Fab 4, Toshiba said.

Construction of Fab 5 was initially planned to start in early 2009, however the plummeting prices for NAND flash due to massive overcapacity and an economic downturn forced the partners to postpone construction. Fab 4 is currently one of the largest semiconductor manufacturing facilities in the world.

Fast Facts:

Structure of building: 2-Story steel frame concrete, five floors  
Ground area: Approximately 38,000m2
Total floor area: Approximately 187,000m2
Construction start: July 2010  
Completion of first phase: Spring 2011 (Planned) 

Related articles

Toshiba to start building Fab 5 NAND flash facility - 23 March 2010

DRAMeXchange details NAND Flash bit supply impact from Japan - 18 March 2011

Toshiba notes NAND flash memory price erosion faster than expected - 19 September 2008

Update: Toshiba and SanDisk shuffle NAND flash production ownership - 20 October 2008

Hynix to start NAND flash production at M11 fab in September - 28 August 2008

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: