Tokyo Electron has said that its newly launched Trias HP Ti metal
CVD deposition system is winning orders from across all regions. The
new system employs a proprietary showerhead gas dispersion system with
optimized surface treatments that reduce particle-related film defects
for 32nm processing requirements.
“The unique low-temperature processing technology offered by TEL’s
new metal CVD system will enable device makers to address the
requirements for metal contacts at the 32nm node and beyond,"said Kenji
Washino, General Manager for TEL’s Single Wafer Deposition Business
Unit. "The Trias HP Ti exemplifies TEL’s commitment to providing
cost-effective manufacturing solutions to our customers’ most advanced
process technology needs.”
Based on TEL’s Trias platform, the
Trias HP Ti is claimed by TEL to be unique in its ability to deposit
titanium (Ti) films over a wide temperature range, including
temperatures that are lower than those typically required by
conventional Ti CVD reactors.