Tegal Corp., innovator of production solutions for the fabrication of advanced MEMS, power ICs and optoelectronic devices, has announced a tool order for a Tegal DRIE 200 system equipped with the ProNov third-generation high-density Inductively Coupled Plasma (ICP) reactor.
This commercial order for the Tegal ProNova reactor is from a first-time Tegal customer in the EU who is yet to be named, the customer intends to use the Deep Reactive Ion Etching (DRIE) tool to perform innovative research for high-performance microelectronics on 200mm wafers.
In a competitive evaluation, the new ProNova ICP source demonstrated higher etch rates, improved etch depth uniformity, better etch tilt angle uniformity, and higher yields than did standard ICP sources for DRIE applications.
These advantages were particularly evident on larger diameter wafers (200mm wafers), with the end results being wider process windows and better tool productivity, both items being critical to creating rapid cycles of learning and performing efficient development and research.
Thomas Mika, Tegal’s President and CEO said, “The commercial launch of the ProNova ICP source today, together with this order for a Tegal DRIE 200 system equipped with a ProNova reactor, confirms that Tegal offers customers the best combination of leading-edge technology, customer support, and production-proven systems for 200mm MEMS and 3D IC applications.”
The ProNova ICP source is available on Tegal 110, 200, 3200, and 4200 DRIE Wafer Processing Systems. ProNova is also compatible as a retrofit with Tegal and AMMS DRIE systems already in the field, and ProNova supports SHARP – Tegal’s Super High Aspect Ratio Process, achieving etched feature aspect ratios of > 100:1 in production environments.