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Tool Order: Samsung‚??s SAIT to use Veeco‚??s MOCVD system for GaN-Based power IC R&D

04 March 2011 | By Mark Osborne | News > Wafer Processing

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Samsung Electronics research organisation, SAIT (Samsung Advanced Institute of Technology) has placed a purchase order with Veeco Instruments for its ‘TurboDisc K465i’ Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) system. The tool will be used for for advanced GaN on Si research for power electronics, according to Veeco.

“The GaN power electronics market is expected to grow significantly in coming years, with potential applications in energy-efficient power conversion devices”
According to William J. Miller, Ph.D., Executive Vice President of Veeco’s Compound Semiconductor Business, “Being selected as a research partner for GaN on Si by SAIT is an important strategic R&D win for Veeco. We look forward to continuing to work with SAIT to commercialize this technology for high volume manufacturing of GaN-based power electronic devices.”

SAIT is the Samsung Group's R&D hub, established in October 1987 to lead the development of cutting-edge technologies.

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