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Tool order: Samsung selects Nanometrics â??UniFireâ?? metrology tool for advanced wafer scale packag
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Samsung Electronics has adopted Nanometrics ‘UniFire’ metrology tool for advanced wafer scale packaging after successfully completing evaluations for development of through-silicon via (TSV) technology. Nanometrics’ said that its UniFire system has now been adopted by five of the top seven semiconductor manufacturers worldwide for wafer scale packaging for advanced TSV and micro bump process control. “With the UniFire, we not only obtain high precision measurements of critical via parameters such as depth and diameter, we also use the tool for applications such as three-dimensional automated review and thick film overlay. Such flexibility and best-of-breed capability translates into improvements in productivity and yield.”
“The UniFire tool with its flexible application base and state-of-the-art performance enables our advanced packaging development, especially for through-silicon via processes,” said Dr. B.H Lee, Sr. Manager of the Metrology division at Samsung Electronics Co. Ltd. "With the UniFire, we not only obtain high precision measurements of critical via parameters such as depth and diameter, we also use the tool for applications such as three-dimensional automated review and thick film overlay. Such flexibility and best-of-breed capability translates into improvements in productivity and yield."
“High precision measurements of TSV, micro bump, and redistribution processes are critical to enable high-yield DRAM devices for next generation wafer scale packaging,” said Kevin Heidrich, Vice President of Marketing and Business Development at Nanometrics. “The UniFire offers a unique, non-destructive, 3-D metrology capability allowing full surface topography control while reducing the need for multiple, independent metrology tools. This capability makes it an indispensable tool to ensure a higher yielding, quality manufacturing process with reduced cost of ownership.”
The UniFire tool offers a broad range of features to control micro bumps, redistribution layer(s) and TSV patterning, etch and deposition processes, including measurement of critical dimensions (CD), registration and depth/height/profile, as well as the ability to measure wafer bow/shape and film thickness.