Two Japanese logic device manufacturers have ordered ‘Pulsar’ Atomic Layer Deposition (ALD) systems from ASM International for high-k gate processing at the 32/28nm technology node. The tools will be used for hafnium-based high-k gate dielectrics, as well as for the dielectric capping layers used to tune work function of the gate stack. One customer has also ordered ASM's ‘EmerALD’ process module for metal gates.
"These orders further extend our leadership position in delivering manufacturing solutions for high-k gates, having now shipped well over 100 Pulsar ALD tools," said Bob Hollands, Director of Marketing for Transistor Products at ASM. “With process integration knowledge for high-k gates growing, we are seeing the adoption of high-k metal gates now accelerate rapidly. The combination of Pulsar and EmerALD demonstrates the benefit of ASM's capability to deposit in a clustered system the high-k film, the dielectric capping layer and the metal electrode."