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TOK to work with CEA-Leti on E-beam lithography photoresists

17 January 2011 | By Mark Osborne | News > Lithography

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CEA-Leti has attracted TOK to join its ‘IMAGINE’ E-beam lithography program to develop maskless photoresists beyond the 20nm node. The multiple e-beam-lithography program at CEA-Leti covers a global approach to the technology, including tool assessment, patterning and process integration, data handling, prototyping and cost analysis and is known for its fundamental RLS (resolution, line edge roughness and sensitivity) development work.

Kazufumi Sato, TOK R&D general manager said, “TOK will contribute to the program by providing a materials perspective based on our deep knowledge of the electron-beam resist and recent discoveries from the EUV resist development.”

“The development of new chemically amplified resist platforms achieving resolution below 20nm with a line-edge roughness in the nanometer range is one of the main challenges for next-generation lithography,” said Serge Tedesco, CEA-Leti program manager. “We have already built a long and fruitful collaboration with TOK by working together at the introduction of e-beam lithography at the STMicroelectronics Crolles Line. We are very pleased to continue this relationship with a worldwide leader in resist technology, ensuring a boost for the IMAGINE program and reinforcing the semiconductor industry’s commitment to introduce ML2 in manufacturing.”

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