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TCAD models to be developed for cryogenic ion implantation

11 February 2011 | By Mark Osborne | News > Wafer Processing

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A collaboration between Synopsys and Varian Semiconductor (VSEA) is to develop Technology CAD (TCAD) models for cryogenic ion implantation in an effort to speed up process development of advanced CMOS and memory technologies and reduce process development cost and time-to-market.

“Today semiconductor manufacturers face tremendous challenges in improving device performance, achieving high product yield, reducing process R&D costs and meeting time-to-market targets,” noted Dr. Yuri Erokhin, senior director for strategic technologies at Varian Semiconductor. “Therefore, it is increasingly critical for simulation to support novel process techniques to reduce technology development time and cost.

“Cryogenic ion implant has been proven to significantly improve transistor performance and is a key enabler in the manufacture of advanced devices. This collaboration with Synopsys will enable our mutual customers to explore and optimize the cryogenic implant process with simulation, reducing time-to-market,” added Dr. Erokhin

The new TCAD Sentaurus Models will be used for the project, according to Synopsis.

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