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T-RAM and GLOBALFOUNDRIES team on embedded Thyristor-RAM
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A future embedded memory technology capable of high cell density coupled to low power capabilities has been selected by GLOBALFOUNDRIES for potential inclusion in customer IC applications ate the 32nm and 22nm nodes. Lithography scaling challenges and low power requirements at these nodes could require better embedded memory solutions. The Thyristor-RAM technology developed by T-RAM will now be developed for future advanced technology nodes.
“We are pleased to be jointly developing T-RAM memory for 32nm and 22nm technologies. T-RAM’s embedded memory technology shows a great deal of potential for use in low-power, high-performance dense cache applications for advanced technology nodes,” noted Gregg Bartlett, Senior Vice President of Technology and R&D at GLOBALFOUNDRIES.
“T-RAM has successfully completed extensive development of the Thyristor-RAM technology and has delivered a fully manufacturable and robust memory solution with proven yield, reliability, and low-cost of integration in earlier technology nodes,” commented Sam Nakib, President and CEO of T-RAM. “We believe that GLOBALFOUNDRIES and their customers’ products provide a great opportunity to further develop and show-case T-RAM’s significant performance and economic advantages.
T-RAM claims that its Thyristor-RAM technology provides the highest combination of density and performance among all embedded memory technology candidates, as it avoids 6T-SRAM and other FET-based memory cells scalability.
This could potentially allow GLOBALFOUNDRIES to develop only one embedded memory technology for both substrate types as well as IC design and process requirements.
