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Strained silicon push puts AMD into R&D project
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Albany Nanotech, part of the College of Nanoscale Science and Engineering at the University at Albany - SUNY, and Advanced Micro Devices have entered into a joint R&D project to develop a new nanometrology capability for measuring the stress state in strained silicon. The new technique seeks to enable the stressstate in strained silicon to be measured with a target spatial resolution better than 10nm. The project will focus on near-field nano-optical techniques, exploiting the enhancement of the optical field at a nanoprobe tip. This new technique would enable more accurate measurements.
The first developmental implementation for nano-optical measurements will be assembled at Albany Nanotech late 2004, under the supervision of Robert Geer, CNSE Associate Professor of Nanoscience. Opened in the autumn of 2004, CNSE is the world's first college devoted to the study of nanoscale science and engineering.
AMD personnel from AMD-Saxony's Materials Analysis Laboratory in Dresden, Germany will participate directly in the research at Albany Nanotech. Findings will be relayed directly to the Dresden laboratory to characterize the performance of transistors for future technology nodes, which are expected to be manufactured in AMD's upcoming leading-edge 300mm fab in Dresden, Germany.