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Soitec enters production with high-resistivity SOI substrate

17 February 2010 | By Mark Osborne | News > Materials and Gases

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The shift to multi-band, multi-mode radio functionality in today's handsets and the growth of Wi-Fi based-applications has enabled Soitec to develop and bring to market a high-resistivity (HR) silicon-on-insulator (SOI) substrate using 200mm wafers. Soitec's HR SOI substrate is claimed to offer >1kOhm.cm resistivity and is available in custom silicon and box thickness, according to the company.

"Our HR-SOI capacity is in place to serve the growing cellular market demand," says Paul Boudre, Chief Operating Officer, Soitec. "This new substrate generation enables chip designers to meet their demanding wireless performance requirements - low RF substrate loss, high isolation, high linearity - on very cost-effective silicon."

Soitec said that it can also offer HR SOI substrates in 300mm for the system on chip (SoC) market working at the 90nm node and below.

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