Online information source for semiconductor professionals

SMIC yields first 45nm 300mm wafers

08 December 2008 | By Mark Osborne | News > Wafer Processing

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

Semiconductor Manufacturing International Corporation (SMIC) has said that its first wafer lots of 45nm bulk CMOS 300mm wafers have been fully processed and produced yields. The results are part of its process and development alliance with IBM. ‘Strong yields’ were achieved on its first full-flow lot under testing conditions set forth by IBM.

"Lead customers are pleased with the progress made by SMIC's 45nm project team and we appreciate the excellent technical support from IBM's Systems and Technology Group," said Dr. Robert Tsu, SMIC's 45nm project leader and Associate Vice President of Logic Technology. "This achievement has marked the first major milestone of the project and paves a way to provide an IBM-licensed technology and SMIC wafer foundry service to our customers."

According to SMIC, the 45nm milestone was completed ahead of schedule.  SMIC said that it has 45nm lead customers planning to start production in 2009.

Related articles

SMIC to offer 40nm half node process at Shanghai 300mm fab - 15 October 2009

SMIC yields on first HiPo 45nm wafer lots - 30 June 2009

SMIC to start 32nm development in Jan-09 - 27 October 2008

SMIC in pilot production with 110nm CMOS image sensor technology - 23 October 2008

SMIC to spend US$1 billion on capital expenditure in 2011 - 18 February 2011

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: