Online information source for semiconductor professionals

SMIC in pilot production with 110nm CMOS image sensor technology

23 October 2008 | By Mark Osborne | News > Wafer Processing

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

New Product: ASML Brion‚??s Tachyon MB-SRAF enables OPC-like compute times - 19 September 2011

CMOS image sensorSemiconductor Manufacturing International Corporation (SMIC) has started pilot production of a 110nm CMOS image sensor (CIS) process technology that can be manufactured on 200mm and 300mm wafers, the company said. SMIC is offering the technology with both aluminum and copper backend metallization.

"Using optimized process conditions, we've successfully reduced dark noise, enabling performance in low light environments,” noted Paul Ouyang, SMIC Vice President of Marketing and Sales. “These features deliver to our customers a high performance product at a reasonable cost, which allows them to enhance their competitiveness and gain leading positions in an ever-growing CIS market."

SMIC believes the 110nm CIS technology is ideal for fully integrated and high density CIS applications.

Related articles

Tower Semiconductor to fab 3D image sensors for Canesta - 15 April 2008

Sony cuts 8,000 jobs from electronics division - 09 December 2008

SMIC yields first 45nm 300mm wafers - 08 December 2008

Tool order: EV Group completes two follow-on orders for fusion bonding systems - 06 October 2009

SMIC to offer 40nm half node process at Shanghai 300mm fab - 15 October 2009

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: