Hynix Semiconductor has joined SEMATECH’s 3D Interconnect Program at UAlbany NanoCollege to address industry infrastructure and technology gaps for high volume adoption of through silicon vias (TSV).
“3D integration offers a path for higher performance, higher density, higher functionality, smaller form factor, and potential cost reduction,” said Dr. Sung Joo Hong, Head of R&D Division of Hynix Semiconductor. “By joining SEMATECH’s 3D Interconnect program and collaborating with industry-leading partners, we expect to play a critical role in accelerating the commercialization of wide I/O DRAM and to realizing 3D’s potential as a manufacturable and affordable path to sustaining semiconductor productivity growth.”
According to SEMATECH, volume implementation of wide input/output (I/O) memory based products is gaining significant momentum in the industry. New and improved technologies for stacked wide I/O DRAM for mobile applications, is one of the key drivers.
Hynix will work with engineers in SEMATECH’s 3D Interconnect program at CNSE’s Albany NanoTech Complex to address industry infrastructure and technology gaps in materials, equipment, integration and product related issues.