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SEMATECH presentations at SPIE focus on EUV

17 February 2011 | By Mark Osborne | News > Lithography

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ASML's beta EUV system remains the only tool in townBuilding the infrastructure for EUV has been costly and thwart with technical challenges of the last few years. At this year’s SPIE Advanced Lithography conference, SEMATECH is using a series of technical paper presentations to report the current progress on EUV.

“We are enthusiastic about sharing our progress on some of the most critical aspects of the development of EUV infrastructure,” said Bryan Rice, director of lithography at SEMATECH. “Through intense research and development efforts, SEMATECH continues to produce industry leading results for enabling EUVL pilot line readiness and advancing EUV extendibility and alternative lithography.”

SEMATECH engineers will report progress on EUV mask infrastructure, manufacturability, advancing extendibility, alternative lithography, metrology and will showcase some of their findings in over 20 papers demonstrating breakthrough results in exposure tool capability, resist advances, defect-related inspection, reticle handling, and nanoimprint.  

Other SEMATECH papers will showcase advances in metrology techniques, photoresist shrinkage, scatterometry, non-destructive TSV etch depth, CD-SAXS - a possible x-ray metrology CD technique for future nodes – and an optical CD metrology technique under development at NIST.

A full list of papers and workshop meetings can be viewed here

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