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SEMATECH and Canon ANELVA to team on non-volatile memory
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The Front End Processes (FEP) Program at SEMATECH has received a boost from Canon ANELVA Corporation in a new collaboration that will focus on materials and process techniques for future non-volatile memory (NVM) applications in the sub-40nm range. A key part of the work will be to improve material reliability and uniformity of dielectrics and metal films, using Canon ANELVA’s physical vapor deposition (PVD) technology.
“This collaborative effort reinforces SEMATECH’s commitment to develop cutting-edge memory technologies utilizing advanced materials for continued performance improvement of semiconductor technologies,” said Raj Jammy, vice president of emerging technologies, SEMATECH. “The joint research initiative with Canon ANELVA will aim to develop the various materials components needed for advanced NVM and evaluate the reliability of these materials.”
“We are excited to work with the most advanced technologists in developing manufacturable solutions for tunnel oxide, charge trap materials, high-k and metal electrodes for advanced flash and other non-volatile memories,” said Naoki Watanabe, General Manager, Engineering Division2, Electronic Devices Engineering Headquarters. “The collaboration combines Canon ANELVA’s experience in precision materials, low damage PVD, and related equipment platforms and SEMATECH’s strengths in the development of fundamental materials and advanced memory technologies.”
The collaboration will be conducted between the research teams of SEMATECH’s FEP device and reliability experts and Canon ANELVA’s semiconductor equipment engineers.