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SEMATECH and AZ Electronic Materials team on EUV resists

02 June 2010 | By Mark Osborne | News > Lithography

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AZ Electronic Materials is partnering with SEMATECH engineers on resist issues related to EUV lithography, specifically in areas of line edge roughness (LER) reduction below 22nm as well as the ultimate resolution of new resists. Testing imaging materials for EUV sensitivity will also be covered. The work will be carried at SEMATECH’s Resist Materials and Development Center (RMDC) at the College of Nanoscale Science and Engineering (CNSE) of the University at Albany.

“Our partnership with AZ Electronic Materials will help strengthen the RMDC’s ability to address critical resist issues in advanced imaging,” said John Warlaumont, vice president of Advanced Technologies at SEMATECH.  “This new collaboration illustrates the effectiveness of SEMATECH’s efforts to include a broader range of industry participants in the search for new solutions to our common technology challenges.”

“Joining the RMDC provides AZ the opportunity to apply our leading-edge underlayer and top-rinse technologies to the industry efforts to improve EUV performance,” said Geoff Wild, AZ's CEO.  "We expect the use of specialty materials 'above and below' the EUV resists will aid in solving some of the current resist processing shortcomings, and we now can test these types of materials at the CNSE.”

“The addition of AZ Electronic Materials will further enhance the SEMATECH-CNSE partnership and serve to accelerate the leading-edge research in EUVL technology at CNSE’s Albany NanoTech Complex,” said Richard Brilla, CNSE vice president for strategy, alliances and consortia. “This collaboration takes advantage of the world-class capabilities at the UAlbany NanoCollege to enable advanced technology solutions that are critical to industry.”

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Reader comments

Why don't they just use nanoimprint?
By smoothedges on 03 June 2010

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