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SELETE completes 65nm CMOS logic process
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SELETE is claiming a key breakthrough whereby transistors employ a hafnium-silicate as the gate dielectric that complies with the low standby power ratings as stated are required within the latest ITRS roadmap.
Also qualified is a two-level metal interconnect which employs an "effective" low-k of 2.7 with a Young's modulus of 10Gpa, which is consistent with first generation low-k materials that had an effective k of 3.0-3.2, while achieving a similar 10Gpa.
Uniformity across 300mm wafers was excellent and reliability factors TDDB (Time Dependent Dielectric Breakdown) on the transistors were deemed sufficient for initial volume production.