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Samsung validates first 40nm class DRAM chip

04 February 2009 | By Síle Mc Mahon | News > Wafer Processing

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SamsungFollowing a validation and certification process in the Intel Platform Validation program, Samsung Electronics Co., Ltd. has revealed that it has developed the first 40nm class DRAM chip and module. The 1Gb DDR2 component (x8) and corresponding 1Gb 800Mbps DDR2 SODIMM (small outline DRAM inline memory module) were both certified for use with the Intel GM45 series Express mobile chipsets.

The migration to 40nm should increase the product’s time-to-market by as much as 50%, as well as show an approximate 60% increase in productivity. Samsung also intends to complete development of a 2Gb DDR3 device by the end of 2009 and  sees this new development as a step closer to the creation of next-generation, ultra-high performance DRAM technologies such as DDR4.

“Securing extremely advanced technology and system/platform validated operability underscores our commitment as technology leader to deploying the most efficient means of producing DRAM in the marketplace,” said Kevin Lee, Vice President of technical marketing, Samsung Semiconductor, Inc.

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