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Samsung starts volume production at the 30xnm node for NAND flash

01 December 2009 | By Mark Osborne | News > Wafer Processing

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Continuing its market leadership and lowest cost producer tag, Samsung Electronics has started volume production of DDR NAND Flash at the 30xnm node. Shipments to OEM customers started at the end of November, according to the company.

“With the new DDR MLC NAND, double data rate transmission can be achieved without increasing power consumption, giving designers a lot more latitude in introducing diverse CE devices,” said Soo-In Cho, Executive Vice President and General Manager of the Memory Division at Samsung Electronics. “Samsung’s accelerated push toward providing memory solutions at much higher speeds will enable faster introduction of high-performance mobile devices that deliver added convenience and greater value to consumers.”

Production of the Samsung 30nm-class DDR MLC NAND comes just eight months after the company announced availability of its 30nm-class 32Gb MLC NAND.

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