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Samsung plans 40nm DDR3 DRAM production for year-end

12 February 2009 | By Mark Osborne | News > Wafer Processing

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Having had its 40nm 1-Gigabit DDR2 DRAM chips certified in the Intel Platform Validation program, Samsung Electronics is planning volume production of a 2Gb DDR3 device using the new 40nm process by the end of 2009.

The company claimed a 60% increase in productivity with its 40nm technology over its 50nm process.

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