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RRAM technology start-up joins SEMATECHâ??s next-gen memory program
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Silicon Valley start-up, 4DS, a developer of next generation RRAM technology, has joined SEMATECH's Front End Processes (FEP) to partner on efforts in non-volatile memory technology development. RRAM is seen by industry experts as an attractive replacement for FLASH memory and as a complement for non-volatile memory applications due to its speed, power profile and scaling. “SEMATECH is pleased to welcome 4DS as a partner,” said Raj Jammy, vice president of emerging technologies at SEMATECH. “4DS’ unique expertise in RRAM materials technology will complement our device, process and characterization expertise. The joint partnership will expand on SEMATECH’s current collaborative efforts to develop suitable materials and process techniques for future non-volatile memory applications.”
The 4DS platform for non-volatile memory is a low temperature CMOS compatible, back end of line (BEOL) process with a simple structure that requires significantly fewer mask steps than FLASH memory.
"This novel structure and simplified process reflects 4DS know-how in materials processing and manufacturing", said 4DS' Chief Scientist, Dongmin Chen, a nanoscale quantum physicist and former Harvard Rowland Institute Fellow. "The SEMATECH collaboration will produce further validation of the 4DS offering.”