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Resist post processing allows EUV patterning at the 22nm node

12 August 2008 | By Mark Osborne | News > Lithography

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ASMLAlthough chemically amplified EUV resists have line width roughness (LWR) between 5-6nm resist post processing and etch processes are capable of reducing the roughness to levels acceptable for the 22nm node, according to new work undertaken at SEMATECH and resist suppliers.

“These results mark a cornerstone in the development of EUV lithography.  They represent the first real 22 nm resist data, building confidence for EUV as a viable technology for 22 nm half-pitch lithography," said John Warlaumont, vice president of advanced technology at SEMATECH.  "Partnering with resist suppliers to accelerate resist cycles of learning has been critical to bringing EUV resist readiness to this point, where EUV resists can now support 22 nm half-pitch imaging.  The combination of SEMATECH and resist supplier expertise has been an indispensable asset in conducting this important advanced research.”

Latest results from SEMATECH show that 22nm half-pitch resolution coupled to favorable photospeeds of 15 mJ/ cm2 produced 5-6nm LWR are now being achieved.

“The focus of SEMATECH’s EUV resist development program is to engineer current CAR platforms to realize 22 nm high pitch introduction and provide a fundamental understanding of EUV resist exposure mechanisms to develop new platforms,” said Stefan Wurm, program manager, EUV at SEMATECH. “We believe this two-pronged approach will drive resist development to the highest level and support EUVL introduction.”

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Reader comments

Does higher dose improve the roughness? If not give up the resist.
By guest on 15 August 2008

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