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Qualcomm targets 28nm devices by mid-2010

01 June 2009 | By Mark Osborne | News > Wafer Processing

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Qualcomm expects to tape out its first commercial products at the 28nm node via foundry partner TSMC, in mid-2010. Qualcomm and TSMC are working on both High-K Metal Gate (HKMG) and Silicon Oxynitride (SiON) based process technologies.

“Our 28nm platform supports the high performance, low power products that deliver next-generation experiences,” said Jason Chen, Vice President of Worldwide Sales and Marketing.

“Qualcomm’s close collaboration with TSMC has always been a key part of our ability to deliver significant advantages to our customers through the industry leading integration, power efficiency and cost efficiency of our products – enabling them to do more with less,” said Jim Clifford, Senior Vice President and General Manager of Qualcomm CDMA Technologies. 

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