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Powerchip taps Nikon and Synopsys in better yielding 42nm flash

26 February 2009 | By Mark Osborne | News > Lithography

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Although currently a small player in the NAND flash memory market, Powerchip Semiconductor (PSC) is collaborating with Nikon and Synopsys to improve yields of memory cells when PSC enters production of 42nm flash devices and customer products using flash. Nikon’s Scanner Signature Files (NSSF) will be used with Synopsys’ Proteus ProGen modelling software to improve accuracy.

"We expect the stepper-specific NSSF parameters can provide the additional modeling accuracy required in this highly competitive memory market," said Nelson Lai, OPC department manager for the Nano-Printing Technology Group at Powerchip, "This NSSF collaboration will be instrumental in increasing yield for our unique 42nm flash memory and in future designs."

"We are committed to providing regular progressions in modeling accuracy to equip our customers with the tools necessary to increase yield in highly competitive markets," said J. Tracy Weed, director of marketing for the Silicon Engineering Group at Synopsys. "Our strong collaboration with Nikon has been very effective in our drive toward sub-nanometer model accuracy by creating a more physical system."

"By incorporating proprietary Nikon scanner information into the Proteus software, customers can gain a competitive advantage through improved OPC accuracy and faster optimization time," said Toshikazu Umatate, operating officer and general manager, Development Headquarters, Precision Equipment Company, Nikon Corporation. "Through this collaboration with Synopsys we have been able to show clear benefits to our customers."

The NSSF parameters provide factory-averaged empirical data from the illumination source, lens and stage, which ports directly into Proteus ProGen models to capture the unique scanner signatures. The migration from ideal to empirical scanner parameters enables enhanced physical modeling and progression to future technology nodes in which customized or aggressive off-axis illumination is common with memory processes.

 

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