Online information source for semiconductor professionals

Panasonic and Renesas use HKMG with ultra-low-k for 32nm SoC devices

09 October 2008 | By Mark Osborne | News > Wafer Processing

Popular articles

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

Panasonic and Renesas Technology Long-standing technology partners Panasonic and Renesas Technology have said they expect to use metal gates and high-k dielectrics for the gate structure with a new ultra low-k dielectric for the interconnect on 32nm SoC devices for future mobile and digital home appliance products.

To achieve a device using complementary metal-insulator semiconductor (CMIS) technology, a type of complementary Metal Oxide Semiconductor (CMOS), at a 32nm node, an ultra-thin film cap layer is applied at the atomic level to transistors with a metal/high-k gate stack structure under optimized conditions. This enables development of a conventional transistor configuration, which allows the use of an oxidized silicon film as the gate insulation layer.

The introduction of the cap layer has, according to the companies, been shown to improve transistor reliability in practical use and suppress distribution of electrical characteristics between transistors, thereby enabling the operation of large-scale circuits.

The aim is to produce high-speed signal processing with very low power consumption. Renesas was one of the earliest chip manufacturers to launch 45nm chips; however they did not adopt HKMG technologies at that node.

 

 

Related articles

Panasonic and Renesas readies 28nm development line - 30 September 2009

Renesas restructures IC manufacturing operations in major consolidation plan - 30 January 2009

Renesas Electronics provides impact assessment update: 300mm fab remains closed - 23 March 2011

ARM to develop 32nm & 28nm SoC design platform for IBM alliance - 29 September 2008

Intel on track with 32nm intro in 4Q09 - 10 December 2008

Reader comments

No comments yet!

Post your comment

Name:
Email:
Please enter the word you see in the image below: