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Numonyx to use Self-Aligned-Contact process architecture in 45nm NOR flash

09 February 2009 | By Mark Osborne | News > Wafer Processing

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Numonyx B.V. has said that it expects volume production of its 45nm multi-level cell (MLC) NOR flash memory to begin in 2010, using Self-Aligned-Contact (SAC) process architecture to obtain the necessary feature sizes but with improved reliability of the flash cells at a lower production costs. Intel Corp. noted last week that an SAC-based 45nm NOR flash process was designed to reduce cost per bit by 50% while delivering higher program performance. Numonyx said that the forthcoming devices increased the speed in which data is written by up to 50%, compared to its 65nm offerings.

“The mobile phone memory segment remains large and the need for high-density, low-cost nonvolatile NOR flash memory continues to drive aggressive scaling requirements,” said Ed Doller, Chief Technology Officer at Numonyx. “Numonyx engineers overcame major scaling limitations by developing new process techniques to produce the 7th generation MLC NOR flash on the industry’s most advanced 45 nm technology, and to be the first to bring the cost and performance benefits to our customers.”

Numonyx said it was currently sampling the devices in limited quantities.

 

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