Online information source for semiconductor professionals

NAND flash ASP declined 30% in 3Q08, says DRAMeXchange

05 November 2008 | By Mark Osborne | News > Fab Management

Popular articles

New Product: Applied Materials new EUV reticle etch system provides nanometer-level accuracy - 19 September 2011

Oberai discusses Magma’s move into solar PV yield management space - 29 August 2008

‚??Velocity‚?? the new buzzword in Intel‚??s PQS annual awards - 12 April 2012

Applied Materials adds Jim Rogers to Board of Directors - 29 April 2008

TSMC honors suppliers at annual Supply Chain Management Forum - 03 December 2008

NAND flash ASP declined 30% in 3Q08, says DRAMeXchangeAccording to DRAMeXchange NAND flash over capacity has worsened in the third quarter as ASPs declined 30 percent Q-on-Q, while bit shipment growth increased 25 percent. Market leader, Samsung contributed the most to bit growth shipments in the quarter, which increased 25 percent, Q-on-Q. IMFT’s bit shipments grew by 10 percent, while Hynix’s declined 14 percent as it closed 200mm NAND fabs.

Samsung also experienced the largest decline in ASPs at more than 30 percent, said DRAMeXchange. Hynix’s 3Q ASP dropped 23 percent. Micron’s ASPs dropped 20 percent.

Samsung’s revenue reached $1.138 billion with a market share of 41.1 percent. Toshiba had $799 million in revenue and a 28.9 percent market share. Hynix ranked third place with $397 million in revenue and 14.4% market share. Micron and Intel took fourth and fifth place with market share of 7.8% and 5.6% respectively.

Related articles

DRAMeXchange details NAND Flash bit supply impact from Japan - 18 March 2011

DRAMeXchange expects 81% NAND flash bit growth in 2009 - 02 January 2009

NAND flash capex to fall nearly 60%, says DRAMeXchange - 17 February 2009

NAND flash market share shuffles in 1Q08 - 06 May 2008

iSuppli cuts NAND revenues from 27 percent growth to 9 percent for 2008 - 07 April 2008

Reader comments

No comments yet!

Post your comment

Please enter the word you see in the image below: