Production partners Micron Technology and Nanya Technology had developed a 42nm DDR3 DRAM device that uses copper metalization with 2Gb density. The new 42nm process now makes 1.35-volts the standard, mainstream voltage requirement, compared to 1.5-volt with previous generations. The partners are also preparing a 3X node migration, which is being developed in R&D.
“With the move to 42nm – and with a 3Xnm process working in our R&D fab in Boise – Micron’s expertise in copper metallization and proprietary cell capacitor technology has enabled us to stay on the cutting-edge of DRAM process design and innovation,” said Robert Feurle, vice president of DRAM marketing. “The addition of this new 2Gb 42nm device to our DRAM product line strengthens our already rich portfolio of memory solutions for customers’ end applications.”
“We are very pleased to offer this 2Gb DDR3, the most competitive DRAM device in production, to our customers,” said Dr. Pei Lin Pai, Vice President of Global Sales and Marketing and spokesman for Nanya. “Nanya plans to serve the server and PC market, as well as the consumer market, with this latest technology device.”
Sampling is scheduled to start in the second calendar quarter of 2010, with production ramp planned for the second half of the year.